論文がアクセプトされました(楢木野先生・本多先生 共著)
Development of Silicon and Carbon Based p-Type Amorphous Semiconductor
Films with Optical Gap Variable for High-Efficiency Multi-Junction Solar
Cells
H. Naragino, Y. Nagata, K. Okafuji, S. Ohtomo, Y. Shimizu, K. Honda
ECS Trans., 2016 75, 153-159.
DOI: 10.1149/07513.0153ecst
Abstruct: P-type boron-doped amorphous silicon and carbon alloy (B-doped a-SixC1-x)
thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully
deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition
(CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate
(TMOB) as a liquid source. Optical gaps of the B-doped a-SixC1-x films
could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical
measurement under UV illumination, it was clarified that the B-doped a-SixC1-x
film with an optical gap of 2.50 eV has the p-type semiconducting property
and photoelectric conversion function with a quantum yield of 1.63 %. The
rectifying action of a p-n heterojunction comprising p-type B-doped a-SixC1-x
film and n-type Si (100) substrate was observed. The open circuit voltage
(VOC) and short circuit current density (JSC) of the heterojunction were
estimated to be 200 mV and 45 mA/cm2, respectively. The results indicate
that p-type B-doped a-SixC1-x films with controllable optical gaps is a
promising p-layer material for multi-junction solar cells.